Nonlinear LBO Crystal

promising laser-active materials Yb:YAG crystal

Yb:YAG is one of the most promising laser-active materials and more suitable for diode-pumping than the traditional Nd-doped systems. Compared with the company used Nd:YAG crystal, Yb:YAG crystal has a much larger absorption bandwidth to reduce thermal management requirements for diode lasers, a longer upper-laser level lifetime, three to four times lower thermal loading per unit pump power.
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products Details

Yb:YAG is one of the most promising laser-active materials and more suitable for diode-pumping than the traditional Nd-doped systems. Compared with the company used Nd:YAG crystal, Yb:YAG crystal has a much larger absorption bandwidth to reduce thermal management requirements for diode lasers, a longer upper-laser level lifetime, three to four times lower thermal loading per unit pump power. 



Advantages

 ● Very low fractional heating, less than 11%

● Very high slope deficiency

● Broad absorption bands, about 8nm@940nm

● No excited-state absorption or up-conversion

● Conveniently pumped by reliable in GaAs diodes

● High thermal conductivity@ 940nm (or 970nm)

● High optical quality

 Laser Rods

● Flat/flat

● Parallel/ anti-parallel wedged

● Brewster angle

● Concave/convex radii

● Cylinder grooved 



Specifications

Material

Yb:YAG

Yb-dopant concentration

0.5%--25at%

Orientation

or

Dimensions

Diameter:2mm-50mm, Length:5-180mm(Upon customer’s request)

Clear aperture

Central 95%

Extinction Ratio

>30dB (depends on actual size)

Diameter Tolerance

+0/-0.02mm

Length tolerance

+0.5/-0mm

Flatness

<λ/10@632.8nm

Damage Threshold

>700MW/cm2 @10ns 10HZ

Barrel Finish

Ground Finish 400#Grit

Scratch/Dig

10-5@MIL-0-13830A

Parallelism

<10 arc seconds

Perpendicularity

<5 arc minutes

Wavefront Distortion

λ/8  per inch @632.8nm

Anti-Reflection coating

R<0.2%@1030nm per surface

Properties

Laser transition

2F5/2 →2F7/2

Laser Wavelength

1030nm

Photon Energy

1.93*10ˉ19 J@1030nm

Emission  Linewidth

9nm 

Fluorescence Lifetime

1.2ms

Diode pump  Band 

940nm or 970nm

Pump Absorption Band Width

8nm

Index of Refraction

1.82@1030nm

Loss Coefficient

0.003 cm-1  



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